The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Mar. 26, 2009
Yuki Niiyama, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masatoshi Ikeda, Legal Representative, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masatoshi Ikeda, legal representative, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
An optical absorption layer comprised of a substance having a band gap energy smaller than that of GaN is formed on an implanted region formed in a pGaN layer as a ground layer. There is performed an annealing step from an upper surface of a substrate with predetermined light such as infrared light, a red light, or the like, which has energy smaller than the band gap energy of the pGaN layer. The optical absorption layer has an absorption coefficient of the light in the annealing step larger than that of the pGaN layer. Accordingly, it is possible to selectively perform a heat treatment on a region directly under the optical absorption layer or a region in a vicinity thereof (the implanted region).