The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Mar. 26, 2010
Yuki Niiyama, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Furukawa Electric Co., Ltd, Tokyo, JP;
Abstract
Provided is a GaN based field effect transistor that is capable of normally-off operation, high breakdown voltage and large current. A body electrodeis provided on the bottom surface or the top surface of the field effect transistor. When the body electrodeis provided on the bottom surface, a p-type GaN layeris provided on a p-type Si substratevia a buffer layercomprising a plurality of AlN layersand GaN layers, with the top layer of that buffer layerbeing a thin AlN layer, and the body electrodebeing formed on the bottom surface of the p-type Si substrate. When the body electrodeis provided on the top surface, a p-type GaN layeris provided on a sapphire substrateand an AlGaN layeris provided on the area under the source electrodeand drain electrode, with the body electrodebeing provided on top of the AlGaN layer. Holesthat are generated by an avalanche phenomenon run through the body electrode