The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
May. 07, 2009
Applicants:
Yoshihiro Sato, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Inventors:
Yoshihiro Sato, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Assignee:
Furukawa Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an element forming region including at least one semiconductor element formed on at least one compound semiconductor layer formed on a substrate and a trench formed between an outer edge of the semiconductor device and the element forming region. The trench spatially separates the compound semiconductor layer, and the trench is formed at least to reach the substrate.