The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Mar. 30, 2011
Yoshihiro Sato, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Nariaki Ikeda, Tokyo, JP;
Takuya Kokawa, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Yoshihiro Sato, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Nariaki Ikeda, Tokyo, JP;
Takuya Kokawa, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Furukawa Electric Co., Ltd., , JP;
Abstract
A field effect transistor includes a high resistance layer on a substrate, a semiconductor operation layer that is formed on the high resistance layer and includes a channel layer that has the carbon concentration of not more than 1×10cmand has the layer thickness of more than 10 nm and not more than 100 nm, a recess that is formed up to the inside of the channel layer in the semiconductor operation layer, source and drain electrodes that are formed on the semiconductor operation layer with the recess intervening therebetween, a gate insulating film that is formed on the semiconductor operation layer so as to cover the recess, and a gate electrode that is formed on the gate insulating film in the recess.