Shoji Ikeda

This inventor holds 58 USPTO granted patents and 1 published patent application, primarily in Magnetic Memory Technology (CPC class H01L). Top assignees: Tohoku University, Hitachi, Ltd., Fujitsu Corporation. Active years: 2004-2026.

USPTO Granted Patents = 58 (Patent Applications = 1)

% Patents Active = 91.4

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 88(Granted Patents)

Forward Citations (Not Self Cited) = 74(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kawasaki, JP (2004 - 2008)
Sendai, JP (2007 - 2023)
Miyagi, JP (2015 - 2024)

Company Filing History:

Globalwafers Japan Co., Ltd.

Tanaka Kikinzoku Kogyo K.k.

where one patent can have more than one assignee

Years Active: 2004-2026

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Areas of Expertise:

Magnetic Memory

Magnetoresistance Element

Tunnel Junction

Silicon Wafer

Sputtering Target

Spintronics

Magnetic Laminated Film

Magnetic Device

Film Formation

Memory Array

Manufacturing Method

Evaluation Apparatus

58 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12520732 - Tunnel junction laminated film, magnetic memory element, and magnetic memory (2026-01-06),

2. 12402537 - Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element (2025-08-26),

3. 12402326 - Magnetic film, magnetoresistance effect element and magnetic memory (2025-08-26),

4. 12371813 - Silicon wafer and method for producing silicon wafer (2025-07-29),

5. 12325908 - Platinum-based sputtering target, and method for producing the same (2025-06-10),

6. 12236988 - Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system (2025-02-25),

7. 11963458 - Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory (2024-04-16),

8. 11770981 - Magnetoresistive element and magnetic memory (2023-09-26),

9. 11765981 - Magnetoresistance effect element and magnetic memory (2023-09-19),

10. 11631804 - Magnetoresistive effect element and magnetic memory (2023-04-18),

11. 11610614 - Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device (2023-03-21),

12. 11563169 - Magnetic tunnel junction element and magnetic memory (2023-01-24),

13. 11532667 - Magnetic laminated film, magnetic memory element, and magnetic memory (2022-12-20),

14. 11468932 - Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array (2022-10-11),

15. 11462253 - Magnetoresistance effect element and magnetic memory (2022-10-04),

Title: The Innovative Journey of Shoji Ikeda

Introduction: Shoji Ikeda is a renowned inventor hailing from Sendai, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Shoji Ikeda holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to innovation.

Career Highlights: With a career spanning over two decades, Shoji Ikeda has worked with leading research institutions and tech companies, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Shoji Ikeda has collaborated with top universities and multinational corporations, fostering a culture of innovation and knowledge sharing.

Conclusion: Shoji Ikeda's relentless pursuit of innovation and collaboration has solidified his position as a trailblazer in the world of technology, inspiring future generations of inventors.