The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 14, 2021
Applicants:
Globalwafers Japan Co., Ltd., Niigata, JP;
Tohoku University, Miyagi, JP;
Inventors:
Haruo Sudo, Niigata, JP;
Takashi Ishikawa, Niigata, JP;
Koji Izunome, Niigata, JP;
Hisashi Matsumura, Niigata, JP;
Tatsuhiko Aoki, Niigata, JP;
Shoji Ikeda, Miyagi, JP;
Tetsuo Endoh, Miyagi, JP;
Etsuo Fukuda, Miyagi, JP;
Assignees:
GLOBALWAFERS JAPAN CO., LTD., Niigata, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 15/20 (2006.01); C30B 33/02 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
C30B 15/203 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 21/3225 (2013.01);
Abstract
A silicon wafer is a Czochralski wafer formed of silicon. The wafer includes a bulk layer having an oxygen concentration of 0.5×10/cmor more; and a surface layer extending from the surface of the wafer to 300 nm in depth, and having an oxygen concentration of 2×10/cmor more.