Etsuo Fukuda

Title: Etsuo Fukuda: Innovator in Silicon Wafer Technology

Introduction

Etsuo Fukuda is a prominent inventor based in Miyagi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon wafers. With a total of 3 patents to his name, Fukuda's work has had a lasting impact on the industry.

Latest Patents

Fukuda's latest patents include innovative technologies that enhance the production and functionality of silicon wafers. One of his notable inventions is a silicon wafer and method for producing silicon wafers. This invention involves a Czochralski wafer formed of silicon, which includes a bulk layer with an oxygen concentration of 0.5×10/cm or more, and a surface layer extending from the surface of the wafer to 300 nm in depth, with an oxygen concentration of 2×10/cm or more. Another significant patent is for a semiconductor memory device and control device for semiconductor memory devices. This device features a memory cell array with resistance change type memory elements, enabling efficient information storage and retrieval.

Career Highlights

Throughout his career, Etsuo Fukuda has worked with notable organizations, including GlobalWafers Japan Co., Ltd. and Tohoku University. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research and development.

Collaborations

Fukuda has collaborated with esteemed colleagues such as Tetsuo Endoh and Takashi Ishikawa. These partnerships have fostered innovation and have been instrumental in advancing semiconductor technology.

Conclusion

Etsuo Fukuda's contributions to silicon wafer technology and semiconductor devices highlight his role as a key innovator in the field. His patents reflect a commitment to enhancing the efficiency and functionality of semiconductor materials.