The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Nov. 17, 2022
Applicant:

Power Spin Inc., Miyagi, JP;

Inventors:

Hiroshi Yoshida, Miyagi, JP;

Toshimasa Namekawa, Miyagi, JP;

Satoru Araki, Miyagi, JP;

Etsuo Fukuda, Miyagi, JP;

Tetsuo Endoh, Miyagi, JP;

Assignee:

POWER SPIN INC., Sendai, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0033 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A semiconductor memory device includes a memory cell array including a plurality of memory cells each including a resistance change type memory element configured to store a resistance state and a switch, a read determination circuit that compares a measurement signal from the memory cell selected in the memory cell array with a reference signal to determine a resistance state so as to read information from the resistance change type memory element, and a reference signal correction unit that corrects a level of the reference signal based on a selected position of the memory cell in the memory cell array.


Find Patent Forward Citations

Loading…