Tatsuhiko Aoki

Title: Innovations by Tatsuhiko Aoki

Introduction

Tatsuhiko Aoki is a prominent inventor based in Niigata, Japan, known for his significant contributions to the field of silicon wafer technology. With a total of eight patents to his name, Aoki has made remarkable advancements that enhance the efficiency and quality of silicon wafers used in various applications.

Latest Patents

One of Aoki's latest patents is a method for heat-treating silicon wafers. This innovative method allows for the efficient discharge of SiO gas produced during the melting of a natural oxide film on the wafer's surface. By suppressing the accumulation of reaction products in the heat treatment chamber, Aoki's method prevents slip deterioration. The process involves holding the wafer for a period of 5 to 30 seconds, setting the rotational speed between 80 to 120 rpm, and controlling the inert gas supply to achieve a gas replacement rate of 90% or more within a temperature range of 900 to 1100 C.

Another notable patent is related to the silicon wafer itself. Aoki's invention describes a Czochralski wafer formed of silicon, which includes a bulk layer with an oxygen concentration of 0.5×10/cm or more. Additionally, the surface layer extends from the wafer's surface to a depth of 300 nm, featuring an oxygen concentration of 2×10/cm or more. These advancements