The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
May. 17, 2010
Takeshi Senda, Niigata, JP;
Hiromichi Isogai, Niigata, JP;
Eiji Toyoda, Niigata, JP;
Kumiko Murayama, Niigata, JP;
Koji Araki, Niigata, JP;
Tatsuhiko Aoki, Niigata, JP;
Haruo Sudo, Niigata, JP;
Koji Izunome, Niigata, JP;
Susumu Maeda, Hadano, JP;
Kazuhiko Kashima, Hadano, JP;
Takeshi Senda, Niigata, JP;
Hiromichi Isogai, Niigata, JP;
Eiji Toyoda, Niigata, JP;
Kumiko Murayama, Niigata, JP;
Koji Araki, Niigata, JP;
Tatsuhiko Aoki, Niigata, JP;
Haruo Sudo, Niigata, JP;
Koji Izunome, Niigata, JP;
Susumu Maeda, Hadano, JP;
Kazuhiko Kashima, Hadano, JP;
Covalent Materials Corporation, Shinagawa-Ku, Tokyo, JP;
Abstract
The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to Tof 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T, rapidly cooling the wafer to Tof 400-800° C. and keeping the wafer at T; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T, rapidly heating the wafer from Tto Tof 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at Tand rapidly cooling the wafer.