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Covalent Materials Corporation

USPTO Granted Patents = 35

% Expired Patents = 31.4

EPO Patents = 3

Trademarks = 2

Forward Citations = 680

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81 inventors (with patents filed for the assignee):

Jun Komiyama (6 out of 16 patents)

Yoshihisa Abe (5 out of 16 patents)

Koji Izunome (5 out of 14 patents)

4. Shunichi Suzuki (5 out of 35 patents)

5. Hiroshi Oishi (4 out of 12 patents)

6. Takeshi Senda (4 out of 13 patents)

7. Akira Yoshida (3 out of 115 patents)

8. Kenichi Eriguchi (3 out of 11 patents)

9. Mitsuhiro Fujita (3 out of 19 patents)

10. Masaki Irie (3 out of 7 patents)

11. Eiji Toyoda (3 out of 5 patents)

12. Hiromichi Isogai (3 out of 9 patents)

13. Kazuhiko Kashima (3 out of 11 patents)

14. Kumiko Murayama (3 out of 4 patents)

15. Susumu Maeda (3 out of 12 patents)

Core Competencies:

Heat-Insulating Material

Culture Substrate

Nitride Semiconductor

Ceramics Composite

Silicon Wafer

Single Crystal Pulling

Hydrophilicity Treatment

Compound Semiconductor

Electro-Optical Thin Film

Micro Channel Structure

Ceramic Fine Particles

Transparent Rare-Earth Oxide

35 patents: Sort by Forward Citations

1. 9139448 - Heat-insulating material (2015-09-22),

2. 9096826 - Culture substrate and culture method for undifferentiated cell and undifferentiated cultured cell (2015-08-04),

3. 9086321 - Method of analyzing nitride semiconductor layer and method of manufacturing nitride semiconductor substrate using the analysis method (2015-07-21),

4. 9045691 - Ceramics composite (2015-06-02),

5. 8940390 - Ceramics composite (2015-01-27),

6. 8785942 - Nitride semiconductor substrate and method of manufacturing the same (2014-07-22),

7. 8691367 - Micro channel structure body and method of manufacturing micro channel structure body (2014-04-08),

8. 8673638 - Cell culture support and cell culture method (2014-03-18),

9. 8399341 - Method for heat treating a silicon wafer (2013-03-19),

10. 8252700 - Method of heat treating silicon wafer (2012-08-28),

11. 8216921 - Method for production of silicon wafer for epitaxial substrate and method for production of epitaxial substrate (2012-07-10),

12. 8212288 - Compound semiconductor substrate comprising a multilayer buffer layer (2012-07-03),

13. 8206623 - Process for producing ceramic fine particles, and ceramic fine particle producing apparatus used therein (2012-06-26),

14. 8186380 - Decompression apparatus and inorganic porous body (2012-05-29),

15. 8148753 - Compound semiconductor substrate having multiple buffer layers (2012-04-03),

Covalent Materials Corporation, based in Tokyo, specializes in the development and manufacturing of advanced materials, particularly in the field of semiconductor technology. The company focuses on innovative solutions that enhance the performance and efficiency of electronic devices. With a strong emphasis on research and development, Covalent Materials aims to lead in the creation of high-quality materials that support the evolving demands of the electronics industry, contributing to advancements in various technological applications.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

35 Patents

#993 in Tokyo

#2,128 in Japan

#19,137 in the World

Covalent Materials Corporation

Forward Citations = 680

81 inventors:

Jun Komiyama (6 out of 16 patents)

Yoshihisa Abe (5 out of 16 patents)

Koji Izunome (5 out of 14 patents)

4. Shunichi Suzuki (5 out of 35 patents)

5. Hiroshi Oishi (4 out of 12 patents)

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