The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jan. 18, 2012
Akira Yoshida, Hadano, JP;
Jun Komiyama, Hadano, JP;
Yoshihisa Abe, Hadano, JP;
Hiroshi Oishi, Hadano, JP;
Kenichi Eriguchi, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
Akira Yoshida, Hadano, JP;
Jun Komiyama, Hadano, JP;
Yoshihisa Abe, Hadano, JP;
Hiroshi Oishi, Hadano, JP;
Kenichi Eriguchi, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
Covalent Materials Corporation, Shinagawa-ku, Tokyo, JP;
Abstract
A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. In a nitride semiconductor substratehaving a substratea buffer layerformed on one principal plane of the substratean intermediate layerformed on the buffer layeran electron transport layerformed on the intermediate layerand an electron supply layerformed on the electron transport layerthe intermediate layerhas a thickness of 200 nm to 1500 nm and a carbon concentration of 5×10atoms/cmto 1×10atoms/cmand is of AlGaN (0.05≦x≦0.24), and the electron transport layerhas a thickness of 5 nm to 200 nm and is of AlGaN (0≦y≦0.04).