The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Aug. 26, 2013
Covalent Materials Corporation, Shinagawa-ku, JP;
Yoshihata Yanase, Hadano, JP;
Hiroshi Shirai, Hadano, JP;
Jun Komiyama, Hadano, JP;
Hiroshi Oishi, Hadano, JP;
COVALENT MATERIALS CORPORATION, Tokyo, JP;
Abstract
A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an ABN layer (A and B: 13 group elements, 0≦x≦1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the ABN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy E, and let a band gap energy value of ABN (x=1) be Eand a band gap energy value of ABN (x=0) be E, x is calculated from Equation E=(1−x)E+xE−bx(1−x) (where b is bowing parameter corresponding to A and B).