The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Sep. 10, 2010
Jun Komiyama, Hadano, JP;
Kenichi Eriguchi, Hadano, JP;
Hiroshi Oishi, Hadano, JP;
Yoshihisa Abe, Hadano, JP;
Akira Yoshida, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
Jun Komiyama, Hadano, JP;
Kenichi Eriguchi, Hadano, JP;
Hiroshi Oishi, Hadano, JP;
Yoshihisa Abe, Hadano, JP;
Akira Yoshida, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
Covalent Materials Corporation, Shinagawa-Ku, Tokyo, JP;
Abstract
A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layerin which AlGaN single crystal layers (0.6≦X≦1.0)containing carbon from 1×10atoms/cmto 1×10atoms/cmand AlGaN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×10atoms/cmto 1×10atoms/cmare alternately and repeatedly stacked in order, and a nitride active layerprovided with an electron transport layerhaving a carbon concentration of 5×10atoms/cmor less and an electron supply layerare deposited on a Si single crystal substratein order. The carbon concentrations of the AlGaN single crystal layersand that of the AlGaN single crystal layersrespectively decrease from the substrateside towards the above-mentioned active layerside. In this way, the compound semiconductor substrate is produced.