Niigata, Japan

Haruo Sudo

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)

Forward Citations (Not Self Cited) = 2(Sep 21, 2024)


Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):

Title: Haruo Sudo: Innovator in Silicon Wafer Technology

Introduction

Haruo Sudo is a prominent inventor based in Niigata, Japan, known for his significant contributions to silicon wafer technology. With a total of nine patents to his name, Sudo has made remarkable advancements in the field, particularly in the production and processing of silicon wafers.

Latest Patents

Among his latest patents, Sudo has developed a silicon wafer and a method for producing it. This silicon wafer is a Czochralski wafer formed of silicon, featuring a bulk layer with an oxygen concentration of 0.5×10/cm or more. Additionally, it includes a surface layer that extends from the surface of the wafer to a depth of 300 nm, with an oxygen concentration of 2×10/cm or more. Another notable patent is his thermal processing method for silicon wafers, which involves a processing temperature between 1250C and 1350C. The cooling rate from this processing temperature ranges from 20C/s to 150C/s, and the thermal processing is adjusted based on specific formulas for oxygen partial pressure in the thermal processing atmosphere.

Career Highlights

Sudo has worked with several notable companies in the semiconductor industry, including GlobalWafers Japan Co., Ltd. and Covalent Materials Corporation. His experience in these organizations has allowed him to refine his expertise in silicon wafer technology

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