The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jul. 30, 2009
Hiromichi Isogai, Niigata, JP;
Takeshi Senda, Niigata, JP;
Eiji Toyoda, Niigata, JP;
Kumiko Murayama, Niigata, JP;
Koji Izunome, Niigata, JP;
Susumu Maeda, Hadano, JP;
Kazuhiko Kashima, Hadano, JP;
Koji Araki, Niigata, JP;
Tatsuhiko Aoki, Niigata, JP;
Haruo Sudo, Niigata, JP;
Yoichiro Mochizuki, Niigata, JP;
Akihiko Kobayashi, Niigata, JP;
Senlin Fu, Niigata, JP;
Hiromichi Isogai, Niigata, JP;
Takeshi Senda, Niigata, JP;
Eiji Toyoda, Niigata, JP;
Kumiko Murayama, Niigata, JP;
Koji Izunome, Niigata, JP;
Susumu Maeda, Hadano, JP;
Kazuhiko Kashima, Hadano, JP;
Koji Araki, Niigata, JP;
Tatsuhiko Aoki, Niigata, JP;
Haruo Sudo, Niigata, JP;
Yoichiro Mochizuki, Niigata, JP;
Akihiko Kobayashi, Niigata, JP;
Senlin Fu, Niigata, JP;
Global Wafers Japan Co., Ltd., Nigata, JP;
Abstract
A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×10atoms/cmor more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.