The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Oct. 10, 2019
Globalwafers Japan Co., Ltd., Niigata, JP;
Aya Ushioda, Niigata, JP;
Tatsuhiko Aoki, Niigata, JP;
GLOBALWAFERS JAPAN CO., LTD., Niigata, JP;
Abstract
Provided is a method for heat-treating a silicon wafer in an inert gas atmosphere, wherein it is possible to discharge SiO gas produced in melting a natural oxide film on the surface of the silicon wafer efficiently, to suppress the accumulation of reaction products in the heat treatment chamber, and to prevent slip deterioration. The wafer is held for a period of 5 to 30 sec inclusive, the rotational speed of the wafer is set to 80 to 120 rpm, and further the inert gas supply in the chamber is controlled so that the gas replacement rate is 90% or more in a temperature range of 900 to 1100° C. inclusive.