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For the Inventor, By the Inventor

Niigata, Japan

Takashi Ishikawa

This inventor holds 9 USPTO granted patents and 2 published patent applications. Top assignees: Globalwafers Japan Co., Ltd., Sumitomo Metal Mining Company, Ltd., Tohoku University. Active years: 1990-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Ishikawa. Retrieved from https://idiyas.com/inventor/takashi-ishikawa-0akaq0a4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9 

% Patents Active = 88.9

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Ichikawa, JP (1990 - 1998)
  • Niigata, JP (2003 - 2023)
  • Kitakanbara-gun, JP (2024)
  • Iwanai-gun, JP (2024)

Company Filing History:

goldMedal3 out of 22 
 
Globalwafers Japan Co., Ltd.
 patents
silverMedal3 out of 898 
 
Sumitomo Metal Mining Company, Ltd.
 patents
bronzeMedal3 out of 1,054 
 
Tohoku University
 patents
4. 2 out of 258 
 
Nippon Seiki Co., Ltd.
 patents
5. 1 out of 189 
 
Toshiba Ceramics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1990-2025

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9 patents (USPTO):Explore Patents
1. 12371813 - Silicon wafer and method for producing silicon wafer (2025-07-29),
2. 11990259 - Rare earth-iron-nitrogen-based magnetic powder, compound for bonded magnet, bonded magnet, and method for producing rare earth-iron-nitrogen-based magnetic powder (2024-05-21),
3. 11887845 - Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate (2024-01-30),
4. 11703687 - Head-up display device (2023-07-18),
5. 11688355 - Lighting control data generation method and lighting control data generation device (2023-06-27),
6. 8936679 - Single crystal pulling-up apparatus of pulling-up silicon single crystal and single crystal pulling-up method of pulling-up silicon single crystal (2015-01-20),
7. 6517632 - Method of fabricating a single crystal ingot and method of fabricating a silicon wafer (2003-02-11),
8. 5769969 - Rare earth-iron-nitrogen magnet alloy (1998-06-23),
9. 4944801 - Process for preparing powder of an alloy of a rare earth element, iron (1990-07-31),

Title: Takashi Ishikawa - Innovator in Silicon Wafer and Magnetic Powder Technologies

Introduction

Takashi Ishikawa is a prominent inventor based in Niigata, Japan, known for his significant contributions to the fields of silicon wafer production and rare earth-iron-nitrogen-based magnetic powders. With a total of 9 patents to his name, Ishikawa has made remarkable advancements that have impacted various industries.

Latest Patents

Ishikawa's latest patents include a method for producing silicon wafers, which are Czochralski wafers formed of silicon. This innovation features a bulk layer with an oxygen concentration of 0.5×10/cm or more, and a surface layer extending to 300 nm in depth with an oxygen concentration of 2×10/cm or more. Additionally, he has developed a rare earth-iron-nitrogen-based magnetic powder, which contains a rare-earth element, iron, and nitrogen, with specific particle size and composition parameters. This magnetic powder is designed to enhance performance in various applications.

Career Highlights

Throughout his career, Takashi Ishikawa has worked with notable companies such as Sumitomo Metal Mining Company, Ltd. and Globalwafers Japan Co., Ltd. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking technologies.

Collaborations

Ishikawa has collaborated with esteemed

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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