Tohoku University

Sumitomo Metal Mining Company, Ltd.

Globalwafers Japan Co., Ltd.

Nippon Seiki Co., Ltd.

Toshiba Ceramics Co., Ltd.

Takashi Ishikawa

Tetsuo Endoh

Koji Izunome

Yasuhiro Yamakawa

Kiyoshi Tsuchida

Etsuo Fukuda

Masanori Endo

Shoji Ikeda

Hironori Banba

Hiromichi Isogai

Haruo Sudo

Tatsuhiko Aoki

Kenji Ohmori

Shingo Narimatsu

Atsushi Kawamoto

Akihiko Kobayashi

Satoshi Sugimoto

Masashi Matsuura

Takao Sakamoto

Kouki Ikeuchi

Yumiko Hirano

Yoshiaki Abe

Toshirou Minami

Takashi Miyahara

Osamu Kubota

Jun Nakao

Nobumitsu Oshimura

Hiroyuki Abiko

Hisashi Matsumura

Michihiro Ohwa

Yukinobu Yoneyama

Kazutaka Kamijo

Moriya Miyashita

A silicon wafer is a Czochralski wafer formed of silicon. The wafer includes a bulk layer having an oxygen concentration of 0.5×10/cmor more; and a surface layer extending from the surface of the wafer to 300 nm in depth, and having an oxygen concentration of 2×10/cmor more.

Silicon wafer and method for producing silicon wafer

A rare earth-iron-nitrogen-based magnetic powder according to this invention contains, as main constituent components, a rare-earth element (R), iron (Fe), and nitrogen (N). Moreover, this magnetic powder has an average particle size of 1.0-10.0 μm, and contains 22.0-30.0 mass % of a rare-earth element (R) and 2.5-4.0 mass % of nitrogen (N). Further, this magnetic powder includes: a core part having any one crystal structure among a ThZntype, a ThNitype, and a TbCutype; and a shell layer provided on the surface of the core part and having a thickness of 1-30 nm. The shell layer contains a rare-earth element (R) and iron (Fe) so that the R/Fe atomic ratio is 0.3-5.0, and further contains 0-10 at % (exclusive of 0) of nitrogen (N). Furthermore, this magnetic powder contains compound particles composed of a rare-earth element (R) and phosphorus (P).

Rare earth-iron-nitrogen-based magnetic powder, compound for bonded magnet, bonded magnet, and method for producing rare earth-iron-nitrogen-based magnetic powder

A method for producing a three-dimensional structure, a method for producing a vertical transistor, a vertical transistor wafer, and a vertical transistor substrate, capable of suppressing the emission of Si due to a heat treatment and making an interface between an oxide film and a core mainly consisting of Si relatively smooth include: forming a three-dimensional shape by processing (for example, by etching) a surface layer of a monocrystalline silicon substrate, the surface layer having an oxygen concentration of 1×10atoms/cmor more; and then forming an oxide film on the surface of the three-dimensional shape by performing a heat treatment. The three-dimensional structure has a shape having projections and recesses in a thickness direction of the silicon substrate, and a height in the thickness direction of the silicon substrate is between 1 nm and 1000 nm, and preferably between 1 nm and 100 nm.

Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate

A head-up display device includes: light sources; a light source driver that drives the light sources; a second control unit that illuminates the light sources via the light source driver on the basis of illumination control data; and a DMD display element that generates display light on the basis of illumination light emitted by the light sources. The illumination control data includes control modes for generating the illumination light brightness corresponding to a requested brightness. The control modes have differing brightness ranges, which partially overlap each other. The second control unit switches modes between the control modes when the requested brightness has reached a mode switching value, which is located in a non-end part of an overlapping region where one of the brightness ranges of one of the control modes and another one of the brightness ranges of another one of the control modes overlap.

Head-up display device

A lighting control data generation method for generating lighting control data for controlling light sources in a HUD device includes: a measurement point specifying step for specifying measurement points in accordance with the brightness of light from a light source at each of output levels set to different values by a light source control unit which controls the light source with reference to lighting control data; and an output characteristic acquisition step for acquiring output characteristics by performing interpolation between the specified measurement points, wherein in the measurement point specification step, measurement points of a first specific point number are specified in a high-brightness mode in which the required brightness exceeds a threshold value, and measurement points of a second specific point number larger than the first specific point number are specified in a low-brightness mode in which the required brightness is the threshold value or low.

Lighting control data generation method and lighting control data generation device

According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.

Single crystal pulling-up apparatus of pulling-up silicon single crystal and single crystal pulling-up method of pulling-up silicon single crystal

A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1&times;10 -5&times;10 atoms/cm , and the carbon density is 5&times;10 -3&times;10 atoms/cm .

Method of fabricating a single crystal ingot and method of fabricating a silicon wafer

A rare earth-iron-nitrogen magnet alloy contains a rare earth element (at least one of the lanthanoids including Y), iron and nitrogen as its main components, or may further contain at least one of Ti, V, Cr, Mn, Cu, Zr, Nb, Mo, Hf, Ta, W, Al, Si and C as another main component M. The main phase of the alloy also contains 0.001 to 0.1% by weight of at least one of Li, Na, X, Rb, Cs, Mg, Ca, Sr and Ba.

Rare earth-iron-nitrogen magnet alloy

A powder of a rare earth oxide, or a powder of a rare earth oxide and a rare earth metal is mixed with a powder containing iron, a powder containing boron and at least one material selected from among an alkali metal, an alkaline earth metal and a hydrogenated product thereof. The mixture is heated at a temperature of 900.degree. C. to 1200.degree. C. in a non-oxidizing atmosphere, subjected to wet treatment, and heated again at a temperature of 650.degree. C. to 1100.degree. C., whereby an alloy powder is obtained. Alternatively, the mixture is heated at a temperature of 900.degree. C. to 1200.degree. C., crushed into coarse particles, heated again at a temperature of 650.degree. C. to 1100.degree. C. and subjected to wet treatment. The powder is pulverized into a finer powder having an average particle diameter of 1 to 10 microns. The powder is used for making a magnet with a resin.

Process for preparing powder of an alloy of a rare earth element, iron

Growing community of inventors

Niigata, Japan

Takashi Ishikawa