The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Jan. 17, 2001
Toshirou Minami, Niigata, JP;
Yumiko Hirano, Niigata, JP;
Kouki Ikeuchi, Niigata, JP;
Takashi Miyahara, Niigata, JP;
Takashi Ishikawa, Niigata, JP;
Osamu Kubota, Niigata, JP;
Akihiko Kobayashi, Kanagawa, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Abstract
A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1×10 -5×10 atoms/cm , and the carbon density is 5×10 -3×10 atoms/cm .
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile