Niigata, Japan

Hisashi Matsumura

Average Co-Inventor Count = 1.0

ph-index = 1


Years Active: 2025

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Hisashi Matsumura - Innovator in Silicon Wafer Technology

Introduction

Hisashi Matsumura is a notable inventor from Niigata, Japan, recognized for his contributions to silicon wafer technology. He holds a patent that showcases his innovative approach to improving silicon wafer production.

Latest Patents

His latest patent is titled "Silicon wafer and method for producing silicon wafer." This invention involves a Czochralski wafer formed of silicon, which includes a bulk layer with an oxygen concentration of 0.5×10/cm or more. Additionally, the wafer features a surface layer extending from the surface to a depth of 300 nm, with an oxygen concentration of 2×10/cm or more.

Career Highlights

Matsumura has had a significant career, working with prominent organizations such as GlobalWafers Japan Co., Ltd. and Tohoku University. His experience in these institutions has contributed to his expertise in the field of semiconductor technology.

Collaborations

Throughout his career, Matsumura has collaborated with esteemed colleagues, including Haruo Sudo and Takashi Ishikawa. These partnerships have fostered innovation and advancement in silicon wafer research and development.

Conclusion

Hisashi Matsumura's work in silicon wafer technology exemplifies the spirit of innovation. His contributions continue to impact the semiconductor industry, paving the way for future advancements.

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