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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11963458 B1

PDFFull Text
Date of Patent:
Apr. 16, 2024

Filed:

Mar. 11, 2019

Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory

Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Koichi Nishioka, Miyagi, JP;

Tetsuo Endoh, Miyagi, JP;

Shoji Ikeda, Miyagi, JP;

Hiroaki Honjo, Miyagi, JP;

Hideo Sato, Miyagi, JP;

Sadahiko Miura, Miyagi, JP;

Assignee:

TOHOKU UNIVERSITY, Miyagi, JP;

Attorney:

Procopio, Cory, Hargreaves & Savitch LLP

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 27/105 (2023.01); H01L 29/82 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H01L 27/105 (2013.01); H01L 29/82 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer () including Ta or the like is inserted beneath a hard mask layer ().

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Nishioka, Koichi. (2024). Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory (U.S. Patent No. 11963458). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11963458

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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