Hideo Sato

USPTO Granted Patents = 30 (Patent Applications = 1)

Average Co-Inventor Count = 5.6

ph-index = 2

Forward Citations = 13(Granted Patents)

Location History:

Sandai, JP (2015)
Sendai, JP (2011 - 2023)
Miyagi, JP (2020 - 2024)

Company Filing History:

Fuji Electric Co., Ltd.

patents

1 out of 152

Fuji Electric Device Technology Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2011-2025

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30 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12402537 - Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element (2025-08-26),

2. 11963458 - Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory (2024-04-16),

3. 11770981 - Magnetoresistive element and magnetic memory (2023-09-26),

4. 11765981 - Magnetoresistance effect element and magnetic memory (2023-09-19),

5. 11690299 - Magnetoresistance effect element and magnetic memory (2023-06-27),

6. 11631804 - Magnetoresistive effect element and magnetic memory (2023-04-18),

7. 11610614 - Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device (2023-03-21),

8. 11563169 - Magnetic tunnel junction element and magnetic memory (2023-01-24),

9. 11532667 - Magnetic laminated film, magnetic memory element, and magnetic memory (2022-12-20),

10. 11462253 - Magnetoresistance effect element and magnetic memory (2022-10-04),

11. 11264565 - Magnetoresistance effect element and magnetic memory (2022-03-01),

12. 11258006 - Magnetic memory element, method for producing same, and magnetic memory (2022-02-22),

13. 11081641 - Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element (2021-08-03),

14. 11054463 - Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit (2021-07-06),

15. 10998491 - Magnetoresistive element and magnetic memory (2021-05-04),

Title: Hideo Sato: Innovator in Magnetic Junction Technology

Introduction: Hideo Sato, an esteemed inventor based in Sendai, Japan, has made significant contributions to the field of magnetic technology. With a remarkable portfolio of 29 patents to his name, his work focuses primarily on magnetic tunnel junction devices and their applications in memory technology.

Latest Patents: Sato's latest innovations include a set of advanced patents that emphasize the manufacturing and functionality of magnetic tunnel junction devices. His most recent patents offer solutions for suppressing diffusion and penetration of elements between various layers within the junction. The patents address the manufacturing method of these devices, detailing the configuration of non-magnetic insertion layers alongside ferromagnetic substances. Moreover, his developments in magnetoresistive elements utilize both shape magnetic anisotropy and anti-parallel coupling to enhance memory performance.

Career Highlights: Over the years, Sato has worked with notable institutions such as Tohoku University and Fuji Electric Co., Ltd., where he has further honed his expertise in magnetic technologies. His dedication to research and innovation has led to the successful patenting of multiple technologies that have had a substantial impact on the industry.

Collaborations: Throughout his career, Hideo Sato has collaborated with esteemed colleagues Shoji Ikeda and Tetsuo Endoh. This teamwork has facilitated the development of cutting-edge solutions in the realm of magnetic junctions and memory technology, further pushing the boundaries of what is possible in this field.

Conclusion: Hideo Sato stands out as a prominent figure in the landscape of innovations related to magnetic technology. His extensive patent portfolio and collaborative spirit underscore his commitment to advancing magnetic junction devices and contributing to the evolution of memory technologies. Through his work, he continues to inspire future innovations in the industry.

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