logo

For the Inventor, By the Inventor

Sendai, Japan

Hideo Sato

This inventor holds 31 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignees: Tohoku University, Fuji Electric Co., Ltd., Fuji Electric Device Technology Co., Ltd.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideo Sato. Retrieved from https://idiyas.com/inventor/hideo-sato-mb39epln

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 31

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Sandai, JP (2015)
  • Sendai, JP (2011 - 2023)
  • Miyagi, JP (2020 - 2024)

Company Filing History:

goldMedal31 out of 1,054 
 
Tohoku University
 patents
silverMedal1 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents
bronzeMedal1 out of 152 
 
Fuji Electric Device Technology Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2011-2026

Loading Chart...
Areas of Expertise:
Magnetic Memory
Magnetoresistance Effect
Magnetic Tunnel Junction
Magnetoresistive Element
Film Formation Method
Spintronics Element
Magnetic Laminated Film
Thermal Stability Factor
Magnetic Random Access Memory
Manufacturing Method
Semiconductor Integrated Circuit
Control Device
31 patents (USPTO):Explore Patents
1. 12520732 - Tunnel junction laminated film, magnetic memory element, and magnetic memory (2026-01-06),
2. 12402537 - Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element (2025-08-26),
3. 11963458 - Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory (2024-04-16),
4. 11770981 - Magnetoresistive element and magnetic memory (2023-09-26),
5. 11765981 - Magnetoresistance effect element and magnetic memory (2023-09-19),
6. 11690299 - Magnetoresistance effect element and magnetic memory (2023-06-27),
7. 11631804 - Magnetoresistive effect element and magnetic memory (2023-04-18),
8. 11610614 - Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device (2023-03-21),
9. 11563169 - Magnetic tunnel junction element and magnetic memory (2023-01-24),
10. 11532667 - Magnetic laminated film, magnetic memory element, and magnetic memory (2022-12-20),
11. 11462253 - Magnetoresistance effect element and magnetic memory (2022-10-04),
12. 11264565 - Magnetoresistance effect element and magnetic memory (2022-03-01),
13. 11258006 - Magnetic memory element, method for producing same, and magnetic memory (2022-02-22),
14. 11081641 - Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element (2021-08-03),
15. 11054463 - Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit (2021-07-06),

Title: Hideo Sato: Innovator in Magnetic Junction Technology

Introduction: Hideo Sato, an esteemed inventor based in Sendai, Japan, has made significant contributions to the field of magnetic technology. With a remarkable portfolio of 29 patents to his name, his work focuses primarily on magnetic tunnel junction devices and their applications in memory technology.

Latest Patents: Sato's latest innovations include a set of advanced patents that emphasize the manufacturing and functionality of magnetic tunnel junction devices. His most recent patents offer solutions for suppressing diffusion and penetration of elements between various layers within the junction. The patents address the manufacturing method of these devices, detailing the configuration of non-magnetic insertion layers alongside ferromagnetic substances. Moreover, his developments in magnetoresistive elements utilize both shape magnetic anisotropy and anti-parallel coupling to enhance memory performance.

Career Highlights: Over the years, Sato has worked with notable institutions such as Tohoku University and Fuji Electric Co., Ltd., where he has further honed his expertise in magnetic technologies. His dedication to research and innovation has led to the successful patenting of multiple technologies that have had a substantial impact on the industry.

Collaborations: Throughout his career, Hideo Sato has collaborated with esteemed colleagues Shoji Ikeda and Tetsuo Endoh. This teamwork has facilitated the development of cutting-edge solutions in the realm of magnetic junctions and memory technology, further pushing the boundaries of what is possible in this field.

Conclusion: Hideo Sato stands out as a prominent figure in the landscape of innovations related to magnetic technology. His extensive patent portfolio and collaborative spirit underscore his commitment to advancing magnetic junction devices and contributing to the evolution of memory technologies. Through his work, he continues to inspire future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…