The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jan. 18, 2017
Applicant:
Tohoku University, Sendai, JP;
Inventors:
Hiroaki Honjo, Sendai, JP;
Tetsuo Endoh, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Hideo Sato, Sendai, JP;
Hideo Ohno, Sendai, JP;
Assignee:
TOHOKU UNIVERSITY, Miyagi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 27/1222 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
The present invention provides a magnetoresistance effect element which has a high thermal stability factor Δ and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.