Hideo Ohno

This inventor holds 79 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Magnetic Memory Technology (CPC class H01L). Top assignees: Tohoku University, Hitachi, Ltd., Nec Corporation. Active years: 1981-2026.

USPTO Granted Patents = 79 (Patent Applications = 1)

% Patents Active = 86.1

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 4.2

ph-index = 11

Forward Citations = 12,141(Granted Patents)

Forward Citations (Not Self Cited) = 12,057(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Ohshiba, Mobara City, Chiba Prefecture, JP (1981)
Tokyo, JP (2003)
Sendai-shi Miyagi, JP (2003 - 2007)
Miyagi, JP (2015 - 2023)
Sendai, JP (2002 - 2024)

Company Filing History:

Japan Science and Technology Agency

patents

5. 3 out of 25,937

Sharp Kabushiki Kaisha Corporation

patents

6. 2 out of 373

Japan Science and Technology Corporation

8. 4 out of 834,350

Other

patents

where one patent can have more than one assignee

Years Active: 1981-2026

Loading Chart...

Areas of Expertise:

Magnetic Memory

Magnetoresistive Element

Spintronics

Magnetic Tunnel Junction

Random Number Generation

Data Transfer Method

Microcontroller

Magnetoresistance Effect

Memory Circuit Device

Thermal Stability Factor

Variable-Resistance Memory

Three Terminal Magnetoresistive Devices

79 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12597547 - Superparamagnetic tunnel junction element and computing system (2026-04-07),

2. 12405769 - Random number generation unit and computing system (2025-09-02),

3. 12131764 - Device, sensor node, access controller, data transfer method, and processing method in microcontroller (2024-10-29),

4. 11862217 - Device, sensor node, access controller, data transfer method, and processing method in microcontroller (2024-01-02),

5. 11690299 - Magnetoresistance effect element and magnetic memory (2023-06-27),

6. 11600313 - Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unit (2023-03-07),

7. 11563169 - Magnetic tunnel junction element and magnetic memory (2023-01-24),

8. 11557719 - Magnetoresistance effect element, circuit device, and circuit unit (2023-01-17),

9. 11462253 - Magnetoresistance effect element and magnetic memory (2022-10-04),

10. 11200933 - Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same (2021-12-14),

11. 11183228 - Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circut unit (2021-11-23),

12. 11133046 - Data writing device for variable-resistance memory element and non-volatile flip-flop (2021-09-28),

13. 11121310 - Spin electronics element and method of manufacturing thereof (2021-09-14),

14. 11081641 - Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element (2021-08-03),

15. 11054463 - Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit (2021-07-06),

Title: The Innovative Journey of Hideo Ohno

Introduction: Hideo Ohno is a renowned inventor hailing from Sendai, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hideo Ohno holds several patents in the areas of semiconductor devices, nanotechnology, and magnetic materials, showcasing his expertise and creativity in these domains.

Career Highlights: With a distinguished career spanning over three decades, Hideo Ohno has held key positions in leading research institutions and universities, where he has spearheaded numerous projects that have pushed the boundaries of science and technology.

Collaborations: Throughout his career, Hideo Ohno has collaborated with top researchers, scientists, and engineers from around the world, fostering a culture of innovation and knowledge exchange that has led to significant advancements in various technological fields.

Conclusion: Hideo Ohno's relentless pursuit of innovation and his passion for pushing the limits of what is possible have solidified his reputation as a trailblazer in the world of inventions and patents.