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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11054463 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

Mar. 22, 2017

Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit

Applicant:

Tohoku University, Sendai, JP;

Inventors:

Kenchi Ito, Sendai, JP;

Tetsuo Endoh, Sendai, JP;

Hideo Sato, Sendai, JP;

Takashi Saito, Sendai, JP;

Masakazu Muraguchi, Sendai, JP;

Hideo Ohno, Sendai, JP;

Assignee:

TOHOKU UNIVERSITY, Sendai, JP;

Attorney:

Oliff PLC

Primary Examiner:

John C Kuan

Int. Cl.
CPC ...
G01R 31/28 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); G01R 27/00 (2006.01); H01L 21/66 (2006.01); H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2874 (2013.01); G01R 31/2894 (2013.01); H01L 21/8239 (2013.01); H01L 22/14 (2013.01); H01L 22/32 (2013.01); H01L 27/22 (2013.01); H01L 27/228 (2013.01); H01L 43/12 (2013.01); G01R 27/00 (2013.01); H01L 22/20 (2013.01);
Abstract

A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

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Ito, Kenchi. (2021). Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit (U.S. Patent No. 11054463). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11054463

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