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Chigasaki, Japan

Ulvac, Inc.

USPTO Granted Patents = 448

% Expired Patents = 18.3

CIPO Patents = 3

EPO Patents = 124

Trademarks = 15

Forward Citations = 1,358

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688 inventors (with patents filed for the assignee):

Kyuzo Nakamura (23 out of 43 patents)

Yoshinori Fujii (22 out of 22 patents)

Koukou Suu (19 out of 20 patents)

4. Satoru Ishibashi (19 out of 21 patents)

5. Hirofumi Minami (17 out of 19 patents)

6. Hiroshi Nagata (16 out of 48 patents)

7. Shinya Nakamura (14 out of 28 patents)

8. Satoru Takasawa (14 out of 14 patents)

9. Noriaki Tani (14 out of 23 patents)

10. Yoshinori Shingaki (12 out of 12 patents)

11. John Rozen (11 out of 50 patents)

12. Yohei Ogawa (11 out of 15 patents)

13. Ryuichiro Kamimura (11 out of 11 patents)

14. Michio Ishikawa (11 out of 12 patents)

15. Junpei Yuyama (11 out of 15 patents)

Core Competencies:

Plasma Processing

Sputtering Apparatus

Deposition Methods

Etching Method

Thin Film Transistor

Vacuum Evaporation

Silicon Nitride Film

Ion Source

Chemical Vapor Deposition

Magnetron Sputtering

Freeze-Drying Device

Oxide Semiconductor

448 patents: Sort by Forward Citations

1. 12768029 - Evaporation source for vacuum evaporation apparatus (2026-10-20),

2. 12760407 - Sputtering apparatus and deposition method of tungsten film (2026-10-13),

3. 12744188 - Etching method (2026-09-22),

4. 12736943 - Information processing device and information processing method (2026-09-15),

5. 12668869 - Evaporation source for vacuum evaporation apparatus (2026-06-30),

6. 12614698 - Plasma processing apparatus and plasma processing method (2026-04-28),

7. 12606903 - Vacuum evaporation method (2026-04-21),

8. 12476090 - Method of depositing silicon nitride film, apparatus for depositing film, and silicon nitride film (2025-11-18),

9. 12469711 - Etching method (2025-11-11),

10. 12293905 - Cathode unit for magnetron sputtering apparatus and magnetron sputtering apparatus (2025-05-06),

11. 12288709 - Vacuum processing apparatus and vacuum processing method using the same (2025-04-29),

12. 12217969 - Silicon dry etching method (2025-02-04),

13. 12205795 - Plasma processing device (2025-01-21),

14. 12169886 - Display device, display method, and storage medium (2024-12-17),

15. 12112929 - Cathode unit for magnetron sputtering apparatus and magnetron sputtering apparatus (2024-10-08),

Company Overview

Ulvac, Inc., headquartered in Chigasaki, Japan, specializes in vacuum processing technologies essential for various industrial applications. The company is renowned for its advancements in plasma processing, sputtering apparatus, and deposition methods, which are critical in the production of thin film transistors and silicon nitride films. Ulvac's expertise extends to etching methods and vacuum evaporation, positioning it as a key player in the semiconductor and electronics sectors, where precision and innovation are paramount.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

448 Patents

#1 in Chigasaki

#410 in Japan

#2,132 in the World

Chigasaki, Japan

Ulvac, Inc.

Forward Citations = 1,358

688 inventors:

Kyuzo Nakamura (23 out of 43 patents)

Yoshinori Fujii (22 out of 22 patents)

Koukou Suu (19 out of 20 patents)

4. Satoru Ishibashi (19 out of 21 patents)

5. Hirofumi Minami (17 out of 19 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ulvac, Inc.. Retrieved from https://idiyas.com/company/ulvac

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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