The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Dec. 14, 2018
Applicant:
Tohoku University, Miyagi, JP;
Inventors:
Hideo Sato, Miyagi, JP;
Shinya Ishikawa, Miyagi, JP;
Shunsuke Fukami, Miyagi, JP;
Hideo Ohno, Miyagi, JP;
Tetsuo Endoh, Miyagi, JP;
Assignee:
Tohoku University, Miyagi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01);
U.S. Cl.
CPC ...
H10N 52/80 (2023.02); H10B 61/22 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02);
Abstract
Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current Iin a balanced manner. A magnetoresistance effect element has a configuration of channel layer ()/barrier layer non adjacent magnetic layer ()/barrier layer adjacent magnetic layer ()/barrier layer ().