Tokyo, Japan

Shunsuke Fukami

This inventor holds 51 USPTO granted patents and 1 published patent application, primarily in Magnetic Memory Technology. Top assignees: Nec Corporation, Tohoku University, Japan Atomic Energy Agency. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shunsuke Fukami. Retrieved from https://idiyas.com/inventor/shunsuke-fukami

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 51 

% Patents Active = 92.2

Average Co-Inventor Count = 4.0

ph-index = 8

Forward Citations = 225(Granted Patents)


Location History:

  • Tokyo, JP (2010 - 2017)
  • Sendai, JP (2015 - 2023)
  • Miyagi, JP (2020 - 2023)

Company Filing History:


Years Active: 2010-2026

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Areas of Expertise:
Magnetic Memory
Magnetoresistance
Random Access Memory
Magnetic Tunnel Junction
Superparamagnetic
Magnetic Material
Non-volatile Logic
Magnetoresistive Element
Magneto-optical
Magnetic Multilayer Film
Domain Wall Motion
Initialization Method
51 patents (USPTO):Explore Patents

Title: Innovations of Shunsuke Fukami: A Pioneer in Magnetic Memory Technologies

Introduction: Shunsuke Fukami, based in Tokyo, Japan, is an esteemed inventor renowned for his contributions to the field of magnetic memory technologies. With an impressive portfolio of 48 patents, he has established himself as a significant figure in advancing innovation in this domain.

Latest Patents: Among his latest inventions is a revolutionary magneto-optical memory interface. This cutting-edge interface includes a memory cell structure consisting of multiple allocated magnetic recording cells. It features a selection mechanism designed to select individual or predetermined numbers of these recording cells, allowing for the application of electronic signals. Additionally, it incorporates a light irradiation part configured to irradiate the selected magnetic memory cells with an optical signal. This innovation enhances the sensitivity of the magnetic recording cells to changes in their magnetization state in response to the irradiation light, demonstrating a significant breakthrough in memory technology.

Another notable patent from Fukami focuses on the magnetoresistance effect element and magnetic memory. It introduces an X-type 3-terminal Spin-Orbit Torque Magnetization Reversal Component (STT-MRAM), characterized by its high thermal stability index and low writing current, efficiently combining these critical attributes in its design.

Career Highlights: Fukami's career has been marked by a strong affiliation with prominent organizations. He has made significant contributions while working at NEC Corporation and Tohoku University, utilizing state-of-the-art resources to push the boundaries of magnetic memory research.

Collaborations: Throughout his career, Shunsuke Fukami has collaborated with esteemed colleagues, including Nobuyuki Ishiwata and Tetsuhiro Suzuki. Their partnerships have led to numerous advancements in the field, reflecting a spirit of innovation and teamwork that drives the industry forward.

Conclusion: Shunsuke Fukami stands out as a leading inventor in the realm of magnetic memory technologies. His extensive patent portfolio showcases his dedication to innovation, while his collaborations highlight the importance of teamwork in achieving groundbreaking results. As technology continues to evolve, Fukami's work is poised to have a lasting impact on the future of memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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