The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Feb. 06, 2019
Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Kyota Watanabe, Miyagi, JP;

Shunsuke Fukami, Miyagi, JP;

Hideo Sato, Miyagi, JP;

Hideo Ohno, Miyagi, JP;

Tetsuo Endoh, Miyagi, JP;

Assignee:

TOHOKU UNIVERSITY, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); G11C 11/1653 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 43/10 (2013.01);
Abstract

A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B)/first non-magnetic layer ()/first magnetic layer ()/first non-magnetic insertion layer ()/second magnetic layer (). A magnetostatic coupling is established between the first magnetic layer () and the second magnetic layer () due to magnetostatic interaction becoming dominant.


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