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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10622550 B1

PDFFull Text
Date of Patent:
Apr. 14, 2020

Filed:

Sep. 28, 2017

Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit

Applicant:

Tohoku University, Sendai-shi, Miyagi, JP;

Inventors:

Shunsuke Fukami, Sendai, JP;

Hideo Ohno, Sendai, JP;

Tetsuo Endoh, Sendai, JP;

Assignee:

TOHOKU UNIVERSITY, Sendai-Shi, Miyagi, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Hoai V Ho

Int. Cl.
CPC ...
G11C 7/00 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 27/105 (2006.01); G11C 11/15 (2006.01); H01L 29/82 (2006.01); H03K 19/18 (2006.01); G06N 3/04 (2006.01); G06N 3/063 (2006.01); G06N 3/08 (2006.01); G11C 11/16 (2006.01); G11C 11/56 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G06N 3/049 (2013.01); G06N 3/0635 (2013.01); G06N 3/088 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); H01L 27/105 (2013.01); H01L 27/226 (2013.01); H01L 29/82 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H03K 19/18 (2013.01);
Abstract

A magnetoresistance effect element includes a bias layer comprised of an antiferromagnetic material and having a shape in which a first length in a first direction greater than a second length in a second direction perpendicular to the first direction, a recording layer comprised of a ferromagnetic material and being disposed on the bias layer, a direction of magnetization of the recording layer being reversible, a barrier layer comprised of an insulation material and being disposed on the recording layer, and a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer, a direction of magnetization of the reference layer being substantially fixed.

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