The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Feb. 19, 2019
Tohoku University, Sendai, JP;
Hiroaki Honjo, Sendai, JP;
Tetsuo Endoh, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Hideo Sato, Sendai, JP;
Koichi Nishioka, Sendai, JP;
TOHOKU UNIVERSITY, Sendai, JP;
Abstract
Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer () and a second magnetic layer () of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer () and the second magnetic layer (), a film thickness t(nm) of the first magnetic layer (), and a film thickness t(nm) of the second magnetic layer () satisfy relationships D<tand D≤tor D≤tand D<t.