The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Aug. 30, 2019
Applicant:

Tohoku University, Sendai, JP;

Inventors:

Koichi Nishioka, Sendai, JP;

Tetsuo Endoh, Sendai, JP;

Shoji Ikeda, Sendai, JP;

Hideo Sato, Sendai, JP;

Hiroaki Honjo, Sendai, JP;

Assignee:

TOHOKU UNIVERSITY, Miyagi., JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetoresistance effect element includes a first reference layer, a first junction layer, a first divided recording layer, a second junction layer, a second divided recording layer, and a third junction layer. The first divided recording layer has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kt).


Find Patent Forward Citations

Nishioka, Koichi. (2025). Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element (U.S. Patent No. 12402537). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12402537

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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