The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Apr. 11, 2019
Tohoku University, Miyagi, JP;
Yoshiaki Saito, Miyagi, JP;
Shoji Ikeda, Miyagi, JP;
Hideo Sato, Miyagi, JP;
Tetsuo Endoh, Miyagi, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Abstract
Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive elementof the invention, includes: a heavy metal layerthat is an epitaxial layer; and a junction portionincluding a recording layerthat is provided on the heavy metal layerand includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layerthat is provided on the recording layerand includes an insulating body, and a reference layerthat is provided on the barrier layerand has magnetization fixed in the in-plane direction, in which the recording layeris subjected to magnetization reversal by applying a write current to the heavy metal layer