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For the Inventor, By the Inventor

Miyagi, Japan

Yoshiaki Saito

This inventor holds 8 USPTO granted patents. Top assignee: Tohoku University. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiaki Saito. Retrieved from https://idiyas.com/inventor/yoshiaki-saito-aegbo3j7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Miyagi, JP (2022 - 2023)
  • Sendai, JP (2023)

Company Filing History:

goldMedal8 out of 1,059 
 
Tohoku University
 patents

Years Active: 2022-2026

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8 patents (USPTO):Explore Patents
1. 12520732 - Tunnel junction laminated film, magnetic memory element, and magnetic memory (2026-01-06),
2. 12402326 - Magnetic film, magnetoresistance effect element and magnetic memory (2025-08-26),
3. 12236988 - Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system (2025-02-25),
4. 11631804 - Magnetoresistive effect element and magnetic memory (2023-04-18),
5. 11610614 - Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device (2023-03-21),
6. 11532667 - Magnetic laminated film, magnetic memory element, and magnetic memory (2022-12-20),
7. 11468932 - Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array (2022-10-11),
8. 11430498 - Magnetoresistance effect element, magnetic memory array, magnetic memory device, and write method for magnetoresistance effect element (2022-08-30),

Title: Yoshiaki Saito: Pioneering Innovations in Magnetic Memory Technology

Introduction: Yoshiaki Saito, a visionary inventor based in Miyagi, Japan, is renowned for his unwavering dedication to advancing technology and driving innovation in the field of magnetic memory. With an impressive portfolio of 5 patents to his name, Saito continues to inspire the next generation of inventors and researchers around the globe.

Latest Patents: Saito's latest patents include groundbreaking inventions such as the Magnetoresistive effect element and magnetic memory. His innovative work has led to the development of a perpendicular magnetization type three-terminal SOT-MRAM that eliminates the need for an external magnetic field, revolutionizing the way magnetic memory devices are designed and operated.

Career Highlights: Currently affiliated with Tohoku University, Saito has made significant contributions to the field of magnetic memory technology. His groundbreaking research has not only resulted in numerous patents but has also paved the way for future advancements in the industry.

Collaborations: Saito has collaborated with esteemed colleagues such as Shoji Ikeda and Tetsuo Endoh, further expanding the impact of his work and fostering a culture of innovation and collaboration within the field. Together, they have pushed the boundaries of technology and revolutionized the way magnetic memory devices are developed and utilized.

Conclusion: Yoshiaki Saito's passion for innovation and his relentless pursuit of technological advancements have solidified his reputation as a leading figure in the field of magnetic memory. His groundbreaking patents and collaborative efforts continue to inspire inventors and researchers worldwide, shaping the future of technology and driving progress in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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