The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Oct. 30, 2020
Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Tetsuo Endoh, Miyagi, JP;

Yoshiaki Saito, Miyagi, JP;

Shoji Ikeda, Miyagi, JP;

Hideo Sato, Miyagi, JP;

Assignee:

Tohoku University, Miyagi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02);
Abstract

Provided are a tunnel junction stacked film having a high thermal stability, and a magnetic memory element and a magnetic memory using the tunnel junction stacked film. A tunnel junction stacked filmincludes a recording layerincluding a first ferromagnetic layercontaining boron, a tunnel junction layeradjacent to the recording layer, and a reference layeradjacent to the tunnel junction layer, wherein the first ferromagnetic layerand the reference layerare magnetized in a perpendicular direction with respect to a film surface, and the recording layerincludes a hafnium layeradjacent to the first ferromagnetic layer


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