The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Jun. 21, 2019
Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Sadahiko Miura, Miyagi, JP;

Hiroaki Honjo, Miyagi, JP;

Hideo Sato, Miyagi, JP;

Shoji Ikeda, Miyagi, JP;

Tetsuo Endoh, Miyagi, JP;

Assignee:

TOHOKU UNIVERSITY, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H10N 50/10 (2023.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01);
Abstract

A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor Δ and a reduction in a writing current Iand which improves a performance index Δ/I(μA) obtained by dividing the thermal stability factor Δ by the writing current I. The magnetoresistance effect element includes a first reference layer (B), a first junction layer (), a first magnetic layer (), a first non-magnetic coupling layer (), a second magnetic layer (), and a second junction layer (), and a film thickness of the first non-magnetic coupling layer () is 0.1 nm or more and 0.3 nm or less.


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