Tohoku University

Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Hideo Sato

Shoji Ikeda

Tetsuo Endoh

Hideo Ohno

Hiroaki Honjo

Shunsuke Fukami

Fumihiro Matsukura

Michihiko Yamanouchi

Masaaki Niwa

Kenchi Ito

Koichi Nishioka

Shinya Ishikawa

Yoshiaki Saito

Kyota Watanabe

Sadahiko Miura

Takehito Shimatsu

Hiroyasu Kataoka

Osamu Kitakami

Satoshi Okamoto

Hajime Aoi

Mathias Bersweiler

Katsuya Miura

Shun Kanai

Soshi Sato

Takashi Saito

Masakazu Muraguchi

Toshinari Watanabe

Yoshihisa Horikawa

A magnetoresistance effect element includes a first reference layer, a first junction layer, a first divided recording layer, a second junction layer, a second divided recording layer, and a third junction layer. The first divided recording layer has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kt).

Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element

Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer () including Ta or the like is inserted beneath a hard mask layer ().

Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory

Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer () and a second magnetic layer () of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer () and the second magnetic layer (), a film thickness t(nm) of the first magnetic layer (), and a film thickness t(nm) of the second magnetic layer () satisfy relationships D&#x3c;tand D&#x2264;tor D&#x2264;tand D&#x3c;t.

Magnetoresistive element and magnetic memory

A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor &#x394; and a reduction in a writing current Iand which improves a performance index &#x394;/I(&#x3bc;A) obtained by dividing the thermal stability factor &#x394; by the writing current I. The magnetoresistance effect element includes a first reference layer (B), a first junction layer (), a first magnetic layer (), a first non-magnetic coupling layer (), a second magnetic layer (), and a second junction layer (), and a film thickness of the first non-magnetic coupling layer () is 0.1 nm or more and 0.3 nm or less.

Magnetoresistance effect element and magnetic memory

Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index &#x394; and a low writing current Iin a balanced manner. A magnetoresistance effect element has a configuration of channel layer ()/barrier layer non adjacent magnetic layer ()/barrier layer adjacent magnetic layer ()/barrier layer ().

A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Magnetoresistive effect element and magnetic memory

Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive elementof the invention, includes: a heavy metal layerthat is an epitaxial layer; and a junction portionincluding a recording layerthat is provided on the heavy metal layerand includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layerthat is provided on the recording layerand includes an insulating body, and a reference layerthat is provided on the barrier layerand has magnetization fixed in the in-plane direction, in which the recording layeris subjected to magnetization reversal by applying a write current to the heavy metal layer

Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

A magnetic tunnel junction element () includes a configuration in which a reference layer () that includes a ferromagnetic material, a barrier layer () that includes O, a recording layer () that includes a ferromagnetic material including Co or Fe, a first protective layer () that includes O, and a second protective layer () that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

Magnetic tunnel junction element and magnetic memory

Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked filmis a stacked film for a magnetic memory element, and includes: a heavy metal layerthat contains &#x3b2; phase WTa(0.00&#x3c;x&#x2264;0.30); and a recording layerthat includes a ferromagnetic layerhaving a reversible magnetization direction and is adjacent to the heavy metal layer, in which a thickness of the heavy metal layeris 2 nm or more and 8 nm or less.

Magnetic laminated film, magnetic memory element, and magnetic memory

Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor &#x394;, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor &#x394; by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer. The magnetoresistance effect element includes: a first recording layer (A); a first non-magnetic layer (); and a first reference layer (B), wherein the first reference layer (B) including n-number of a plurality of magnetic layers () and (n&#x2212;1)&#x2212;number of a plurality of non-magnetic insertion layers ((n&#x2212;1)) adjacently sandwiched by each of the plurality of magnetic layers, where n&#x2265;3.

Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7&#xd7;10atoms/mor more in a position of 2 nm inside from an outer circumferential end of the columnar stack.

Magnetic memory element, method for producing same, and magnetic memory

The present invention provides a magnetoresistance effect element which has a high thermal stability factor &#x394; and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.

Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element

A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit

A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B)/first non-magnetic layer ()/first magnetic layer ()/first non-magnetic insertion layer ()/second magnetic layer (). A magnetostatic coupling is established between the first magnetic layer () and the second magnetic layer () due to magnetostatic interaction becoming dominant.

Growing community of inventors

Sendai, Japan

Hideo Sato