Tohoku University

Hitachi, Ltd.

Fujitsu Corporation

Nec Corporation

Ulvac, Inc.

Tanaka Kikinzoku Kogyo K.k.

Globalwafers Japan Co., Ltd.

Shoji Ikeda

Hideo Ohno

Tetsuo Endoh

Hideo Sato

Hiroaki Honjo

Fumihiro Matsukura

Katsuya Miura

Hiroyuki Yamamoto

Shunsuke Fukami

Masaaki Niwa

Shun Kanai

Yoshiaki Saito

Jun Hayakawa

Michihiko Yamanouchi

Masaki Endoh

Kenchi Ito

Koichi Nishioka

Yuji Uehara

Ikuya Tagawa

Takayuki Kubomiya

Sadahiko Miura

Soshi Sato

Hiromasa Takahashi

Shinya Ishikawa

Kyota Watanabe

Masaaki Matsuoka

Young Min Lee

Mathias Bersweiler

Tetsuo Endo

Riichiro Takemura

Tadahiko Sugibayashi

Nobuyuki Ishiwata

Tadashi Morita

Kazuo Ono

Hiroki Yamamoto

Yoshinori Ohtsuka

Koji Izunome

Yosuke Kurosaki

Takashi Ishikawa

Haruo Sudo

Masahiro Kakehi

Tatsuhiko Aoki

Hiroki Koike

Etsuo Fukuda

Kosuke Kimura

Yoshihisa Horikawa

Naoki Takeguchi

Hisashi Matsumura

Toshinari Watanabe

Akihito Fujino

Provided are a magnetic film, a magnetoresistance effect element and a magnetic memory which take advantages of atop-pinned structure and a bottom-pinned structure, maintain perpendicular magnetic anisotropy of magnetic layers in a fixing layer and allow strong pinning even in an annealing treatment after a protective film is formed. A fixing layer of a magnetic film has a basic configuration in which a first magnetic layer (), a first non-magnetic layer (), a first Pt layer (), a second magnetic layer () disposed adjacent to each other in this order. The magnetization directions of the first magnetic layer () and the second magnetic layer () are both a direction perpendicular to the film surface, and an antiferromagnetic coupling is formed between the first magnetic layer () and the second magnetic layer ().

Magnetic film, magnetoresistance effect element and magnetic memory

A magnetoresistance effect element includes a first reference layer, a first junction layer, a first divided recording layer, a second junction layer, a second divided recording layer, and a third junction layer. The first divided recording layer has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kt).

Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element

A silicon wafer is a Czochralski wafer formed of silicon. The wafer includes a bulk layer having an oxygen concentration of 0.5×10/cmor more; and a surface layer extending from the surface of the wafer to 300 nm in depth, and having an oxygen concentration of 2×10/cmor more.

Silicon wafer and method for producing silicon wafer

The present invention relates to a platinum-based sputtering target containing platinum or a platinum alloy. The platinum-based sputtering target of the present invention is characterized by a material structure in a thickness-direction cross section thereof. Specifically, when a thickness-direction cross section is equally divided into n sections (n=5 to 20) along a thickness direction, a region including (n−2) sections excluding both end sections is set as a determination region, and when an average grain size in each of the sections is measured in the determination region, as well as an average grain size in the entire determination region is measured, the average grain size in the entire determination region is 150 μm or less, and a coefficient of variation calculated based on the average grain size in each of the sections of the determination region is 15% or less.

Platinum-based sputtering target, and method for producing the same

A magnetic multilayer film for a magnetic memory element includes an amorphous heavy metal layer having a multilayer structure in which a plurality of first layers containing Hf alternate repeatedly with a plurality of second layers containing a heavy metal excluding Hf; and a recording layer that includes a ferromagnetic layer and that is adjacent to the heavy metal layer, the ferromagnetic layer having a variable magnetization direction.

Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system

Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer () including Ta or the like is inserted beneath a hard mask layer ().

Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory

Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer () and a second magnetic layer () of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer () and the second magnetic layer (), a film thickness t(nm) of the first magnetic layer (), and a film thickness t(nm) of the second magnetic layer () satisfy relationships D&#x3c;tand D&#x2264;tor D&#x2264;tand D&#x3c;t.

Magnetoresistive element and magnetic memory

A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor &#x394; and a reduction in a writing current Iand which improves a performance index &#x394;/I(&#x3bc;A) obtained by dividing the thermal stability factor &#x394; by the writing current I. The magnetoresistance effect element includes a first reference layer (B), a first junction layer (), a first magnetic layer (), a first non-magnetic coupling layer (), a second magnetic layer (), and a second junction layer (), and a film thickness of the first non-magnetic coupling layer () is 0.1 nm or more and 0.3 nm or less.

Magnetoresistance effect element and magnetic memory

A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Magnetoresistive effect element and magnetic memory

Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive elementof the invention, includes: a heavy metal layerthat is an epitaxial layer; and a junction portionincluding a recording layerthat is provided on the heavy metal layerand includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layerthat is provided on the recording layerand includes an insulating body, and a reference layerthat is provided on the barrier layerand has magnetization fixed in the in-plane direction, in which the recording layeris subjected to magnetization reversal by applying a write current to the heavy metal layer

Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

A magnetic tunnel junction element () includes a configuration in which a reference layer () that includes a ferromagnetic material, a barrier layer () that includes O, a recording layer () that includes a ferromagnetic material including Co or Fe, a first protective layer () that includes O, and a second protective layer () that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

Magnetic tunnel junction element and magnetic memory

Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked filmis a stacked film for a magnetic memory element, and includes: a heavy metal layerthat contains &#x3b2; phase WTa(0.00&#x3c;x&#x2264;0.30); and a recording layerthat includes a ferromagnetic layerhaving a reversible magnetization direction and is adjacent to the heavy metal layer, in which a thickness of the heavy metal layeris 2 nm or more and 8 nm or less.

Magnetic laminated film, magnetic memory element, and magnetic memory

A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array.

Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array

Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor &#x394;, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element. A magnetoresistance effect element includes: a heavy metal layer; a magnetic recording unit including a recording layer that includes a ferromagnetic layer that is magnetized in a vertical direction with respect to a film surface and is provided on a front surface of the heavy metal layer, a barrier layer that is provided on a surface of the recording layer which is opposite to the heavy metal layer and is formed from an insulator, and a reference layer which is provided on a surface of the barrier layer which is opposite to the recording layer, and a magnetization of the reference layer is fixed in the vertical direction with respect to a film surface; an insulating layer that is provided on a surface of the heavy metal layer which is opposite to the magnetic recording unit; a first terminal that is connected to the insulating layer at a position facing the recording layer with the heavy metal layer and the insulating layer interposed therebetween and applies a voltage to the heavy metal layer through the insulating layer; a second terminal that is connected to the reference layer; and a third terminal and a fourth terminal which are connected to the heavy metal layer, and cause a write current to flow to the heavy metal layer between the magnetic recording unit and the insulating layer.

Magnetoresistance effect element, magnetic memory array, magnetic memory device, and write method for magnetoresistance effect element

Growing community of inventors

Sendai, Japan

Shoji Ikeda