Tainan, Taiwan

Shin-Cheng Lin

This inventor holds 68 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Technology (CPC class H01L). Top assignee: Vanguard International Semiconductor Corporation. Active years: 2010-2026.

USPTO Granted Patents = 68 

% Patents Active = 100.0


Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 94(Granted Patents)

Forward Citations (Not Self Cited) = 57(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tainan, TW (2010 - 2024)
  • Hsinchu County, TW (2024)

Company Filing History:


Years Active: 2010-2026

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Areas of Expertise:
High Electron Mobility Transistor
Semiconductor Device
Fabrication Method
Touch Sensing Circuits
Lateral Diffused MOSFET
High-Voltage Semiconductor
Gate Metal Layer
Passive Components
Non-Active Region
Doped Region
Power Device
Field Oxide
68 patents (USPTO):Explore Patents

Title: The Innovative Journey of Shin-Cheng Lin

Introduction: Shin-Cheng Lin, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Lin's most recent patents focus on advancements in renewable energy technologies, particularly in the field of solar power efficiency and energy storage solutions.

Career Highlights: With a career spanning over two decades, Lin has established himself as a leading figure in the renewable energy sector. His work has not only revolutionized the industry but has also paved the way for a more sustainable future.

Collaborations: Throughout his career, Lin has collaborated with top research institutions and leading companies in the renewable energy field. His partnerships have led to the development of cutting-edge technologies that have reshaped the way we harness and utilize energy.

Conclusion: Shin-Cheng Lin's dedication to innovation and sustainability has left an indelible mark on the world of technology. His pioneering spirit and commitment to excellence continue to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
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