The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Nov. 09, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shin-Cheng Lin, Tainan, TW;
Cheng-Wei Chou, Taoyuan, TW;
Ting-En Hsieh, New Taipei, TW;
Yi-Han Huang, Taoyuan, TW;
Kwang-Ming Lin, Taichung, TW;
Yung-Fong Lin, Taoyuan, TW;
Cheng-Tao Chou, Huwei Township, TW;
Chi-Fu Lee, Taoyuan, TW;
Chia-Lin Chen, Hsinchu, TW;
Shu-Wen Chang, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.