The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Feb. 14, 2020
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Shin-Cheng Lin, Tainan, TW;
Cheng-Wei Chou, Taoyuan, TW;
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 29/402 (2013.01); H01L 29/41775 (2013.01); H01L 29/7786 (2013.01);
Abstract
A semiconductor structure includes a substrate, a gate structure on the substrate, and a source structure and a drain structure on opposite sides of the gate structure. The gate structure includes a gate electrode on the substrate and a gate metal layer on the gate electrode. The gate metal layer has at least one notch, which exposes the gate electrode below. The electric potential of the source structure is different from that of the gate structure.