The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Dec. 14, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Yeh-Jen Huang, Hsinchu, TW;
Wen-Hsin Lin, Jhubei, TW;
Chun-Jung Chiu, Tainan, TW;
Shin-Cheng Lin, Tainan, TW;
Jian-Hsing Lee, Puzih, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device including a substrate, a seed layer, a buffer layer, a channel layer, a barrier layer, a gate structure, a first source/drain structure, a second source/drain structure, and a contact is provided. The seed layer is disposed on the substrate. The buffer layer is disposed on the seed layer. The channel layer is disposed on the buffer layer. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The first and second source/drain structures are disposed on opposite sides of the gate structure. The contact contacts the first source/drain structure. The distance between the gate structure and the contact is between 0.5 micrometers and 30 micrometers.