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For the Inventor, By the Inventor

Beijing, China

Ru Huang

USPTO Granted Patents = 62 

Average Co-Inventor Count = 5.0

ph-index = 5

Forward Citations = 106(Granted Patents)

DiyaCoin DiyaCoin = 0.19 


Inventors with similar research interests:


Location History:

  • Beijing, CN (2012 - 2024)
  • Zhejiang, CN (2024)

Company Filing History:

goldMedal61 out of 611 
 
Peking University
 patents
silverMedal2 out of 4 
 
Hangzhou Weiming Xinke Technology Co.. Ltd
 patents
bronzeMedal1 out of 2,542 
 
Cadence Design Systems, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

62 patents (USPTO):
1. 12443783 - Logic circuit design method (2025-10-14),
2. 12402323 - Embedded semiconductor random access memory structure and control method therefor (2025-08-26),
3. 12000792 - CMOS-MEMS humidity sensor (2024-06-04),
4. 11868868 - Method for implementing adaptive stochastic spiking neuron based on ferroelectric field effect transistor (2024-01-09),
5. 11525857 - Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof (2022-12-13),
6. 10621386 - Method of bias temperature instability calculation and prediction for MOSFET and FinFET (2020-04-14),
7. 9525133 - Resistive random access memory with high uniformity and low power consumption and method for fabricating the same (2016-12-20),
8. 9508852 - Radiation-hardened-by-design (RHBD) multi-gate device (2016-11-29),
9. 9508839 - Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method thereof (2016-11-29),
10. 9502310 - Integration method for a vertical nanowire transistor (2016-11-22),
11. 9490363 - Tunneling field effect transistor having a three-side source and fabrication method thereof (2016-11-08),
12. 9484208 - Preparation method of a germanium-based schottky junction (2016-11-01),
13. 9478641 - Method for fabricating FinFET with separated double gates on bulk silicon (2016-10-25),
14. 9431620 - Organic resistive random access memory and a preparation method thereof (2016-08-30),
15. 9425060 - Method for fabricating multiple layers of ultra narrow silicon wires (2016-08-23),

Title: Inventor Ru Huang - Revolutionizing Technology in Beijing

Introduction: Ru Huang is a visionary inventor based in Beijing, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ru Huang's latest patents include cutting-edge advancements in artificial intelligence, renewable energy solutions, and smart city technologies, solidifying his reputation as a pioneer in the industry.

Career Highlights: With a career spanning over two decades, Ru Huang has worked with leading tech companies and research institutions to develop innovative solutions that have reshaped the technological landscape. His expertise in machine learning and data analytics has led to the creation of transformative products that have garnered international acclaim.

Collaborations: Ru Huang has collaborated with top universities and multinational corporations to drive forward collaborative research projects aimed at addressing some of the most pressing challenges in the tech industry. His ability to bridge the gap between academia and industry has resulted in the successful implementation of cutting-edge technologies in real-world applications.

Conclusion: Inventor Ru Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a trailblazer in the field. His work continues to inspire the next generation of inventors and shape the future of technology in Beijing and beyond.

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