The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Sep. 30, 2013
Peking University, Beijing, CN;
Ru Huang, Beijing, CN;
Weikang Wu, Beijing, CN;
Xia An, Beijing, CN;
Fei Tan, Beijing, CN;
Liangxi Huang, Beijing, CN;
Hui Feng, Beijing, CN;
Xing Zhang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses a radiation-hardened-by-design (RHBD) multi-gate device and a fabrication method thereof. The multi-gate device of the present invention includes a substrate; a source region and a drain region, which are on the substrate; a protruding fin structure and a field dielectric layer between the source region and the drain region on the substrate; a gate dielectric and a gate electrode on the fin structure and the dielectric layer; and two isolation layers separated to each other, which are disposed in the drain region between the adjacent two fins, wherein an interlayer is sandwiched between the two isolation layers. The interlayer has a doping type which is opposite to that of the substrate so that a shunt PN junction is formed between the interlayer and the substrate, and the shunt PN junction has an electrode not connected to the drain so that a part of the charges collected by the shunt PN junction are not output to the drain and are ultimately guided out of the multi-gate devices, thereby weakening the influence of the single-event effect. In comparison with a multi-gate device of prior art, the multi-gate device of the present invention may effectively suppress the sensitivity of the device to single event irradiation in the event that the layout areas of the two types of devices are almost same.