IDiyas

For the Inventor, By the Inventor

Beijing, China

Xia An

USPTO Granted Patents = 14 

Average Co-Inventor Count = 5.6

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:

goldMedal14 out of 611 
 
Peking University
 patents

Years Active: 2013-2022

Loading Chart...
14 patents (USPTO):
1. 11525857 - Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof (2022-12-13),
2. 9508852 - Radiation-hardened-by-design (RHBD) multi-gate device (2016-11-29),
3. 9484208 - Preparation method of a germanium-based schottky junction (2016-11-01),
4. 9312126 - Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate (2016-04-12),
5. 9147597 - Method for isolating active regions in germanium-based MOS device (2015-09-29),
6. 9086448 - Method for predicting reliable lifetime of SOI mosfet device (2015-07-21),
7. 8877594 - CMOS device for reducing radiation-induced charge collection and method for fabricating the same (2014-11-04),
8. 8865543 - Ge-based NMOS device and method for fabricating the same (2014-10-21),
9. 8722312 - Method for fabricating semiconductor nano circular ring (2014-05-13),
10. 8673722 - Strained channel field effect transistor and the method for fabricating the same (2014-03-18),
11. 8652929 - CMOS device for reducing charge sharing effect and fabrication method thereof (2014-02-18),
12. 8632691 - Interface treatment method for germanium-based device (2014-01-21),
13. 8541847 - Semiconductor device and method for fabricating the same (2013-09-24),
14. 8450155 - Method for introducing channel stress and field effect transistor fabricated by the same (2013-05-28),

Title: Innovations of Inventor Xia An

Introduction

Xia An is a prominent inventor based in Beijing, China. He has made significant contributions to the field of device technology, particularly in radiation-hardened designs. With a total of 14 patents to his name, Xia An continues to push the boundaries of innovation.

Latest Patents

Xia An's latest patents include a method for characterizing fluctuation induced by single particle irradiation in a device. This method involves testing a plurality of devices of varying sizes before and after irradiation to obtain threshold voltage distribution. The results help in correcting process fluctuation models and design margins for devices operating under irradiation. Another notable patent is the radiation-hardened-by-design (RHBD) multi-gate device. This invention features a substrate, source and drain regions, a protruding fin structure, and a field dielectric layer. The design effectively suppresses the sensitivity of the device to single event irradiation, enhancing its reliability.

Career Highlights

Xia An is affiliated with Peking University, where he engages in cutting-edge research and development. His work has garnered attention for its practical applications in enhancing device performance under challenging conditions.

Collaborations

Xia An collaborates with talented individuals such as Ru Huang and Xing Zhang, contributing to a dynamic research environment.

Conclusion

Xia An's innovative work in device technology and his numerous patents highlight his role as a leading inventor in the field. His contributions continue to influence advancements in radiation-hardened designs and device reliability.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…