The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Sep. 09, 2011
RU Huang, Beijing, CN;
Yujie AL, Beijing, CN;
Zhihua Hao, Beijing, CN;
Shuangshuang Pu, Beijing, CN;
Jiewen Fan, Beijing, CN;
Shuai Sun, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xia an, Beijing, CN;
Ru Huang, Beijing, CN;
Yujie Al, Beijing, CN;
Zhihua Hao, Beijing, CN;
Shuangshuang Pu, Beijing, CN;
Jiewen Fan, Beijing, CN;
Shuai Sun, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xia An, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses a method for fabricating a semiconductor nano circular ring. In the method, firstly, a positive photoresist is coated on a semiconductor substrate, then the photoresist is exposed by using a circular mask with a micrometer-sized diameter to obtain the circular ring-shaped photoresist, based on the poisson diffraction principle. Then, a plasma etching is performed on the substrate under a protection of the circular ring-shaped photoresist to form a circular ring-shaped structure with a nano-sized wall thickness on a surface of the substrate. The embodiment of present invention fabricates a nano-sized circular ring-shaped structure by using a micrometer-sized lithography equipment and a micrometer-sized circular mask, and overcomes the dependence on advanced technologies, so as to effectively reduce the fabrication cost of the circular ring-shaped nano structure.