Runsheng Wang

USPTO Granted Patents = 14 (Patent Applications = 5)

Average Co-Inventor Count = 6.5

ph-index = 3

Forward Citations = 43(Granted Patents)

Company Filing History:

Cadence Design Systems, Inc.

patents

Years Active: 2012-2020

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14 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10621386 - Method of bias temperature instability calculation and prediction for MOSFET and FinFET (2020-04-14),

2. 9478641 - Method for fabricating FinFET with separated double gates on bulk silicon (2016-10-25),

3. 9099500 - Programmable array of silicon nanowire field effect transistor and method for fabricating the same (2015-08-04),

4. 9034702 - Method for fabricating silicon nanowire field effect transistor based on wet etching (2015-05-19),

5. 9018968 - Method for testing density and location of gate dielectric layer trap of semiconductor device (2015-04-28),

6. 8901644 - Field effect transistor with a vertical channel and fabrication method thereof (2014-12-02),

7. 8866507 - Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact (2014-10-21),

8. 8722312 - Method for fabricating semiconductor nano circular ring (2014-05-13),

9. 8592276 - Fabrication method of vertical silicon nanowire field effect transistor (2013-11-26),

10. 8564031 - High voltage-resistant lateral double-diffused transistor based on nanowire device (2013-10-22),

11. 8563370 - Method for fabricating surrounding-gate silicon nanowire transistor with air sidewalls (2013-10-22),

12. 8513067 - Fabrication method for surrounding gate silicon nanowire transistor with air as spacers (2013-08-20),

13. 8372752 - Method for fabricating ultra-fine nanowire (2013-02-12),

14. 8288238 - Method for fabricating a tunneling field-effect transistor (2012-10-16),

Title: The Innovative Journey of Inventor Runsheng Wang

Introduction: Runsheng Wang is a distinguished inventor hailing from Beijing, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Wang's latest patents focus on advancements in artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a career spanning over two decades, Wang has held key positions in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patents.

Collaborations: Wang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing that has led to significant breakthroughs in various industries.

Conclusion: Runsheng Wang's dedication to pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and entrepreneurs worldwide.

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