The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Nov. 18, 2011
RU Huang, Beijing, CN;
Jibin Zou, Beijing, CN;
Runsheng Wang, Beijing, CN;
Jiewen Fan, Beijing, CN;
Changze Liu, Beijing, CN;
Yangyuan Wang, Beijing, CN;
Ru Huang, Beijing, CN;
Jibin Zou, Beijing, CN;
Runsheng Wang, Beijing, CN;
Jiewen Fan, Beijing, CN;
Changze Liu, Beijing, CN;
Yangyuan Wang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses a hexagonal programmable array based on a silicon nanowire field effect transistor and a method for fabricating the same. The array includes a nanowire device, a nanowire device connection region and a gate connection region, wherein, the nanowire device has a cylinder shape, and includes a silicon nanowire channel, a gate dielectric layer, and a gate region, the nanowire channel being surrounded by the gate dielectric layer, and the gate dielectric layer being surrounded by the gate region; the nanowire devices are arranged in a hexagon shape to form programming unit, the nanowire device connection region is a connection node of three nanowire devices and secured to a silicon supporter. The present invention can achieve a complex control logic of interconnections and is suitable for a digital/analog and a mixed-signal circuit having a high integration degree and a high speed.