IDiyas

For the Inventor, By the Inventor

Beijing, China

Yangyuan Wang

USPTO Granted Patents = 16 

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal16 out of 611 
 
Peking University
 patents
silverMedal1 out of 4 
 
Hangzhou Weiming Xinke Technology Co.. Ltd
 patents
where one patent can have more than one assignee

Years Active: 2009-2025

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16 patents (USPTO):
1. 12443783 - Logic circuit design method (2025-10-14),
2. 9508839 - Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method thereof (2016-11-29),
3. 9490363 - Tunneling field effect transistor having a three-side source and fabrication method thereof (2016-11-08),
4. 9214629 - Resistive memory and method for fabricating the same (2015-12-15),
5. 9171944 - Self-adaptive composite tunneling field effect transistor and method for fabricating the same (2015-10-27),
6. 9099500 - Programmable array of silicon nanowire field effect transistor and method for fabricating the same (2015-08-04),
7. 9054075 - Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereof (2015-06-09),
8. 9018968 - Method for testing density and location of gate dielectric layer trap of semiconductor device (2015-04-28),
9. 8981421 - Strip-shaped gate-modulated tunneling field effect transistor and a preparation method thereof (2015-03-17),
10. 8921174 - Method for fabricating complementary tunneling field effect transistor based on standard CMOS IC process (2014-12-30),
11. 8895980 - Tunneling current amplification transistor (2014-11-25),
12. 8866507 - Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact (2014-10-21),
13. 8710557 - MOS transistor having combined-source structure with low power consumption and method for fabricating the same (2014-04-29),
14. 8513639 - Resistive-switching memory and fabrication method thereof (2013-08-20),
15. 8507959 - Combined-source MOS transistor with comb-shaped gate, and method for manufacturing the same (2013-08-13),

Title: The Innovative Journey of Inventor Yangyuan Wang

Introduction: Yangyuan Wang is a pioneering inventor based in Beijing, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Wang's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, smart city infrastructure, and renewable energy solutions.

Career Highlights: With a career spanning over two decades, Wang has established himself as a leading figure in the tech industry, holding numerous patents in various cutting-edge technologies. He has been recognized for his innovative approach to problem-solving and his ability to translate complex ideas into practical solutions.

Collaborations: Throughout his career, Wang has collaborated with top research institutions, leading tech companies, and academic experts to push the boundaries of innovation. His collaborative efforts have resulted in the development of revolutionary technologies that have the potential to shape the future of various industries.

Conclusion: Yangyuan Wang's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a visionary inventor in the tech world. His work continues to inspire the next generation of inventors and pave the way for a more technologically advanced future.

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